weitron http://www .weitron.com.tw 2SK3018W rating symbol unit v gs i d p d 20 100 200 op er a ting j unc tion temperature range storage temperature range * with each pin mounted on the recommended lands. t j t st g c v mw g a t e-s our c e v oltage device marking 2sk3018 = kn n-channel power mosfet featur es: * simple drive requirement * small package outline description: * low on-resistance. * fast switching speed. * low voltage drive (2.5v) makes this device ideal for portable equipment. * easily designed drive circuits. * easy to parallel. +150 c 1 2 3 d r ain-s our c e v oltage v ds 30 v le a d( p b)- f r ee p b continuous drain current t a =25c ma i dm 400 ma pulsed drain current (tp 10s) maximum ratings (t a =25c unless otherwise specified) 1/5 30-oct-09 sot-323(sc-70) 1 2 source 3 drain gate *gate protection diode -55 to +150 value power dissipation (t a =25c) *
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w 2SK3018W c h a r a c t e r i s t i c s y m b o l u n i t m i n t y p m a x v ( b r ) d s s v g s ( t h ) r d s ( o n ) i g s s i d s s g f s c i s s c o s s t r t r c r s s 30 - v 0.8 1.5 v - - - - - 1.0 a a ms 5.0 7.0 8.0 - - - 9 4 15 35 ns - - - 20 - - - - - - - 1.0 13 pf electrical characteristics (t a =25c unless otherwise noted) rise time fall time r l =500 ,r g =10 turn-on time v gs =5v, i d =10ma, r l =500 ,r g =10 v gs =5v, i d =10ma, r l =500 ,r g =10 v gs =5v, i d =10ma, r l =500 ,r g =10 v gs =5v, i d =10ma, reverse transfer capacitance v ds =5v, v gs =0v, f=1.0mhz t d(on) 80 80 - - - - - - turn-o delay time t d(on) switching output capacitance v ds =5v, v gs =0v, f=1.0mhz input capacitance v ds =5v, v gs =0v, f=1.0mhz 13 dynamic drain-source breakdown voltage v gs =0v, i d =10a gate-threshold voltage v ds =3v , i d =100a gate-source leakage current v gs =20v drain-source leakage current v ds =30v, v gs =0 static drain-source on-resistance v gs =4v, i d =10ma v gs =2.5v, i d =1ma forward transconductance v ds =3v, i d =10ma static 2/5 30-oct-09
3/5 30-oct-09 2SK3018W weitron http://ww w .weitron.com.tw typical electrica l characteristics 0.15 (a) drain current : i d 0.1 0.05 0 0 1 2 3 4 5 drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs =1.5v 4v 2v 100m ta=25 c pulsed (a) d drain current : i 10m 1m 0.1m 4 0 1 2 3 gate-source voltage : v gs (v) fig.1 typical output characteristics 200m 50m 20m 5m 2m 0.5m 0.2m ta=125 c 75 c 25 c ? 25 c v ds =3v pulsed 2 (v) (th) gate threshold voltage : v gs 1.5 1 0.5 0 ? 50 ? 25 0 2 5 5 0 7 5 10 0 12 5 150 channel temperature : tch ( c ) fig.2 typical transfer characteristics fig.3 gate threshold voltage vs. channel temperature v ds =3v i d =0.1ma pulsed 50 ) ? ? ? ( (on) 20 static drain-source on-state resistance : r ds 10 5 2 1 0.5 0.00 1 0.00 2 0.00 5 0.0 1 0.0 2 0.0 5 0. 1 0. 2 0.5 drain current : i d (a) v gs =4v pulsed ta=125 c 75 c 25 c - 25 c 50 ) ) n o ( ( 20 ds static drain-source on-state resistance : r 10 5 2 1 0.5 0.00 1 0.00 2 0.00 5 0.0 1 0.0 2 0.0 5 0. 1 0. 2 0.5 drain current : i d (a) fig.4 static drain-source on-state resistance vs. drain current ( ) ta=125 c 75 c 25 c ? 25 c v gs =2.5v pulsed 15 10 5 0 0 5 1 0 1 5 20 gate-source voltage : v gs (v) fig.5 static drain-source on-state resistance vs. drain current ( ? ) i d =0.1a ) ( (on) ds static drain-source on-state resistance : r ta=25 c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage 6 3 0 ? 5 0 0 25 150 channel temperature : tch ( c) ) ? ( (on) ds static drain-source on-state resistance : r 8 7 5 4 2 1 ? 25 5 0 7 5 10 0 125 fig.7 static drain-source on-state resistance vs. channel temperature v gs =4v pulsed i d =100ma 0.2 i d =50ma forward transfer admittance : |yfs| (s) 0.1 0.05 0.02 0.01 0.005 0.001 0.000 1 0.000 2 0.000 5 0.00 1 0.00 2 0.00 5 0.0 1 0.0 2 0.05 drain current : i d (a) 0.002 0. 1 0. 2 0.5 ta= ? 25 c 25 c 75 c 125 c v ds =3v pulsed fig.8 forward transfer admittance vs. drain current (a) reverse drain current : i dr 1.5 source-drain voltage : v sd (v) 100m 50m 0 0.5 1 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c fig.9 reverse drain current vs. source-drain voltage ( )
4/5 30-oct-09 2SK3018W weitron http://ww w .weitron.com.tw 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25 c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage ( ? ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0. 2 0. 5 1 2 5 1 0 2 0 50 5 10 20 fig.11 typical capacitance vs. drain-source voltage c iss c oss c rss ta =25 c f=1mh z v gs =0v 0.1 10 20 500 switching time : t (ns) drain current : i d (ma) 5 0. 2 0. 5 1 2 5 1 0 2 0 50 50 100 200 1000 2 100 fig.12 switching characteristics (see figures 13 and 14 for the measurement circuit and resultant waveforms) t a =25 c v dd =5v v gs =5v r g =10 ? pulsed t d(off) t r t d(on) t f switching characteristics measurement circuit fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching time waveforms
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w s o t - 3 2 3 o u t l i n e d e m e n s i o n s a b d e g m l h j t o p v i e w k c d i m a b c d e g h j k l m m i n 0 . 3 0 1 . 1 5 2 . 0 0 - 0 . 3 0 1 . 2 0 1 . 8 0 0 . 0 0 0 . 8 0 0 . 4 2 0 . 1 0 m a x 0 . 4 0 1 . 3 5 2 . 4 0 0 . 6 5 0 . 4 0 1 . 4 0 2 . 2 0 0 . 1 0 1 . 0 0 0 . 5 3 0 . 2 5 5/5 30-oct-09 unit:mm sot-323 2SK3018W
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